Jing-jing Wang

发表

Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms

Jinlong Liu, Junjun Wei, Lifu Hei, 2018, Vacuum.

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate*

Zezhao He, S. Cai, Jia Li, 2016 .

Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

Jinlong Liu, Chengming Li, Yuting Zheng, 2017, International Journal of Minerals, Metallurgy, and Materials.

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Baoshun Zhang, Jinyan Wang, Zhihong Feng, 2011 .

Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

Jinlong Liu, Chengming Li, Liang-xian Chen, 2013, International Journal of Minerals, Metallurgy, and Materials.

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Hui Guo, Zezhao He, S. Cai, 2013 .

Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates*

Zezhao He, S. Cai, T. Han, 2016 .

Chemical vapor deposition graphene of high mobility by gradient growth method on an 4H-SiC (0 0 0 1) substrate

Zezhao He, Jianchao Guo, Zhihong Feng, 2018, Applied Surface Science.

Polycrystalline diamond MESFETs by Au-mask technology for RF applications

Zezhao He, S. Cai, Chengming Li, 2013, Science China Technological Sciences.

Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors

S. Cai, Yang Jiang, S. Dun, 2012 .