A. Smatti

Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

A. Amrouche, B. Djezzar, A. Smatti, 1998, Proceedings of the Tenth International Conference on Microelectronics (Cat. No.98EX186).

Comparison between OTCP and C-V extraction methods for radiation-induced traps in MOSFET devices

S. Oussalah, B. Djezzar, H. Tahi, 2008, 2008 IEEE International Conference on Semiconductor Electronics.

Oxide-trap based on charge pumping (OTCP) extraction method for irradiated MOSFET Devices: Part II (Low frequencies)

B. Djezzar, A. Smatti, S. Oussalah, 2003, 2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515).

FEM Modeling of Sensitive Layer Swelling Effect on Microbalance Gas Sensor Based on TFBAR Resonator

R. Serhane, A. Smatti, F. Larbi, 2015 .

ZnO based gas sensor testing

Yamna Bakha, Yassine Djeridane, Walid Aouimeur, 2014, 2014 9th International Design and Test Symposium (IDT).

Structural and Optical Parameters of SnO2 Nanoparticle Deposited by Spray Pyrolysis

A. Smatti, S. Hamzaoui, Y. Bakha, 2020 .

A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

S. Oussalah, B. Djezzar, A. Smatti, 2004, IEEE Transactions on Nuclear Science.

Electrical characterization of oxide and Si/SiO/sub 2/ interface of irradiated NMOS transistors at low radiation doses

A. Amrouche, B. Djezzar, A. Smatti, 1998, 1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255).