Jan L. Weyher

发表

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

Herbert Zirath, Vincent Desmaris, P. K. Larsen, 2006 .

Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers

M. Baeumler, W. Jantz, Jan L. Weyher, 1999 .

Orthodox etching of HVPE-grown GaN

Grzegorz Nowak, Richard J. Molnar, Izabella Grzegory, 2007 .

Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching

Boleslaw Lucznik, Izabella Grzegory, Sylwester Porowski, 2008 .

Properties of InGaN blue laser diodes grown on bulk GaN substrates

Grzegorz Nowak, Piotr Perlin, Robert Czernecki, 2005 .

The K2S2O8-KOH photoetching system for GaN

F. D. Tichelaar, A. Khachapuridze, J. Weyher, 2010 .

Defects in GaN single crystals and homoepitaxial structures

Boleslaw Lucznik, Grzegorz Nowak, Izabella Grzegory, 2005 .

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

Izabella Grzegory, Sylwester Porowski, J. Weyher, 2002 .

Complementary study of defects in GaN by photo-etching and TEM

H. W. Zandbergen, F. D. Tichelaar, P. K. Larsen, 2002 .

Defect-selective etching of GaN in a modified molten bases system

Izabella Grzegory, Grzegorz Kamler, E. Jezierska, 2002 .