B. Zhao

发表

Sub‐100 μA current operation of strained InGaAs quantum well lasers at low temperatures

Ali Shakouri, Y. H. Zhuang, A. Yariv, 1994 .

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy

Hadis Morkoç, Amnon Yariv, S. Sanders, 1989 .

Evidence for state filling effect on high speed modulation dynamics of quantum well lasers

Y. H. Zhuang, A. Yariv, N. Kuze, 1992 .

Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA

Y. H. Zhuang, A. Yariv, L. E. Eng, 1993 .

Ultralow threshold multiquantum well InGaAs lasers

Y. H. Zhuang, A. Yariv, J. E. Ungar, 1992 .

High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers

Y. H. Zhuang, A. Yariv, J. E. Ungar, 1992 .

Direct measurement of linewidth enhancement factors in quantum well lasers of different quantum well barrier heights

Y. H. Zhuang, A. Yariv, A. Yariv, 1993 .

Very high modulation efficiency of ultralow threshold current single quantum well InGaAs lasers

Amnon Yariv, Y. H. Zhuang, A. Yariv, 1993 .