A.L.P. Rotondaro

Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process

G.A. Brown, A. Chatterjee, M. Rodder, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain

L. Colombo, A.L.P. Rotondaro, M.R. Visokay, 2002, IEEE Electron Device Letters.

Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs

Z. Celik-Butler, L. Colombo, Z. Çelik-Butler, 2006, IEEE Transactions on Electron Devices.

Characterization and comparison of the charge trapping in HfSiON and HfO/sub 2/ gate dielectrics

L. Colombo, A.L.P. Rotondaro, A. Shanware, 2003, IEEE International Electron Devices Meeting 2003.

CMOS metal replacement gate transistors using tantalum pentoxide gate insulator

G.A. Brown, A. Chatterjee, M. Rodder, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Feasibility of using W/TiN as metal gate for conventional 0.13 /spl mu/m CMOS technology and beyond

A. Chatterjee, M. Rodder, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

D. T. Grider, H. Bu, Y. Kim, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures

Denis Flandre, Jean-Pierre Colinge, C. Claeys, 1993 .

A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide

G.A. Brown, J. D. Luttmer, R. Chapman, 1997, International Electron Devices Meeting. IEDM Technical Digest.