G.Q. Lo

发表

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

S.C. Rustagi, R. Kumar, N. Balasubramanian, 2006, IEEE Electron Device Letters.

Thermo-Optical Enhanced Silicon Wire Interleavers

M.B. Yu, Q. Fang, G. Lo, 2008, IEEE Photonics Technology Letters.

Vertically Stacked SiGe Nanowire Array Channel CMOS Transistors

S.C. Rustagi, N. Balasubramanian, N. Singh, 2007, IEEE Electron Device Letters.

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.

Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications

G. Lo, D. Kwong, D.L. Kwong, 2008, IEEE Photonics Technology Letters.

Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates

E.B. Liao, N. Balasubramanian, L.H. Guo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

S.H.G. Teo, N. Balasubramanian, E. Gnani, 2008, IEEE Electron Device Letters.

Integration of RF-MEMS, passives and CMOS-IC on silicon substrate by low temperature wafer to wafer bonding technique

E.B. Liao, N. Balasubramanian, M. Tang, 2008, 2008 58th Electronic Components and Technology Conference.

Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- $\kappa$/Metal-Gate Device Structures

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

J. Wang, M.B. Yu, G. Lo, 2007, IEEE Electron Device Letters.

Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability

N. Singh, G. Lo, D. Kwong, 2008, 2008 IEEE International Electron Devices Meeting.

Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide

J. Wang, M.B. Yu, G. Lo, 2008, IEEE Photonics Technology Letters.

Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM's

G. Lo, D. Kwong, P. Fazan, 1992, IEEE Electron Device Letters.

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, IEEE Electron Device Letters.

High-density MIM capacitors (/spl sim/85 nF/cm/sup 2/) on organic substrates

R. Kumar, E.B. Liao, N. Balasubramanian, 2005, IEEE Electron Device Letters.

Waveguided Ge/Si Avalanche Photodiode With Separate Vertical SEG-Ge Absorption, Lateral Si Charge, and Multiplication Configuration

S.C. Rustagi, Kah-Wee Ang, Shiyang Zhu, 2009, IEEE Electron Device Letters.

Trap Layer Engineered Gate-All-Around Vertically Stacked Twin Si -Nanowire Nonvolatile Memory

S.H.G. Teo, N. Balasubramanian, M.B. Yu, 2007, 2007 IEEE International Electron Devices Meeting.

MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

W. Ting, G. Lo, D. Kwong, 1990, IEEE Electron Device Letters.

Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

D.S.H. Chan, D.-L. Kwong, N. Singh, 2009, IEEE Electron Device Letters.

High-density CMOS interconnect realized on flexible organic substrate

L.H. Guo, D.-L. Kwong, G.Q. Lo, 2006, IEEE Electron Device Letters.

High-performance inductors on plastic substrate

N. Balasubramanian, L.H. Guo, D.-L. Kwong, 2005, IEEE Electron Device Letters.

Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier

J. Wang, M.B. Yu, G. Lo, 2008, IEEE Electron Device Letters.

Enhanced Vertical Light Extraction From Ultrathin Amorphous Si–Si$_{3}$ N$_{4}$ Multilayers With Photonic Crystal Patterns

M.B. Yu, D.L. Kwong, G.Q. Lo, 2009, IEEE Photonics Technology Letters.

Microelectromechanical Maltese-cross metamaterial with tunable terahertz anisotropy

T. Bourouina, X.H. Zhang, G. Lo, 2012, Nature Communications.

Dependence of hot-carrier immunity on channel length and channel width in MOSFETs with N/sub 2/O-grown gate oxides

D.-L. Kwong, G.Q. Lo, J. Ahn, 1992, IEEE Electron Device Letters.

CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs

S.H.G. Teo, B. Yang, K. Buddharaju, 2008, ESSDERC 2008 - 38th European Solid-State Device Research Conference.

Hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs

A.B. Joshi, G. Lo, D. Kwong, 1991, IEEE Electron Device Letters.

Development of RF MEMS switch on flexible organic substrate with wafer transfer technology (WTT)

R. Kumar, L.H. Guo, A.B. Yu, 2006, 56th Electronic Components and Technology Conference 2006.

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

D.S.H. Chan, N. Balasubramanian, N. Singh, 2006, IEEE Electron Device Letters.

P-channel MOSFET's with ultrathin N/sub 2/O gate oxides

W. Ting, D.-L. Kwong, G.Q. Lo, 1992, IEEE Electron Device Letters.

Gate-all-around Si-nanowire CMOS inverter logic fabricated using top-down approach

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

S.C. Rustagi, N. Balasubramanian, N. Singh, 2007, IEEE Electron Device Letters.

RF MEMS switch integrated on printed circuit board with metallic membrane first sequence and transferring

R. Kumar, L.H. Guo, A.B. Yu, 2006, IEEE Electron Device Letters.

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

R. Kumar, N. Balasubramanian, B. Abidha, 2006, IEEE Electron Device Letters.

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

S.C. Rustagi, N. Balasubramanian, K. Buddharaju, 2008, IEEE Transactions on Electron Devices.

Polycrystalline Si Nanowire SONOS Nonvolatile Memory Cell Fabricated on a Gate-All-Around (GAA) Channel Architecture

D.L. Kwong, N. Singh, G.Q. Lo, 2009, IEEE Electron Device Letters.

Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts

D.S.H. Chan, D.L. Kwong, N. Singh, 2008, 2008 Symposium on VLSI Technology.

Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires

N. Singh, G. Lo, D. Kwong, 2009, IEEE Electron Device Letters.

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

D.S.H. Chan, D.-L. Kwong, G.Q. Lo, 2007, IEEE Electron Device Letters.

Bendability of single-crystal Si MOSFETs investigated on flexible substrate

E.B. Liao, N. Balasubramanian, L.H. Guo, 2006, IEEE Electron Device Letters.

Silicon Nitride-Based Compact Double-Ring Resonator Comb Filter With Flat-Top Response

M.B. Yu, Q. Fang, D.L. Kwong, 2008, IEEE Photonics Technology Letters.