Kimmo Saarinen

发表

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

D. J. Somerford, E. Muñoz, T. Laine, 1998 .

Chapter 5 Positron Annihilation Spectroscopy of Defects in Semiconductors

Pekka J. Hautojärvi, P. Hautojärvi, K. Saarinen, 1998 .

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Pierre Gibart, Bernard Beaumont, Filip Tuomisto, 2004 .

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Boleslaw Lucznik, Jari Likonen, Filip Tuomisto, 2005 .

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals

Boleslaw Lucznik, Filip Tuomisto, Izabella Grzegory, 2003 .

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

Olivier Briot, J. Oila, Pekka J. Hautojärvi, 1998 .

Investigation of the structural and optical properties of free-standing GaN grown by HVPE

Filip Tuomisto, Carl Hemmingsson, Bo Monemar, 2005 .

Molecular beam epitaxy growth and doping of III-nitrides on Si(1 1 1): layer morphology and doping efficiency

E. Muñoz, K. H. Ploog, Fernando Calle, 2001 .

Optical and Structural Characteristics of Virtually Unstrained Bulk-Like GaN

Mathias Schubert, Martin Stutzmann, Filip Tuomisto, 2004 .

Ga Vacancies as Dominant Intrinsic Acceptors in GaN Grown by Hydride Vapor Phase Epitaxy

David C. Look, S. S. Park, Richard J. Molnar, 2003 .

Irradiation‐induced defects in ZnO studied by positron annihilation spectroscopy

David C. Look, Filip Tuomisto, D. Look, 2004 .

Observation of Zn vacancies in ZnO grown by chemical vapor transport

Filip Tuomisto, F. Tuomisto, K. Grasza, 2006 .

Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire

M. Pessa, Jari Likonen, Jaakko Keränen, 2002 .

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

L. Dobrzynski, T. Laine, Izabella Grzegory, 1997 .

Introduction and recovery of point defects in electron-irradiated ZnO

David C. Look, Filip Tuomisto, D. Look, 2005 .

Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals

David C. Look, Izabella Grzegory, Tadeusz Suski, 2001 .

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Mathias Schubert, Detlef Hommel, Filip Tuomisto, 2006 .

Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN

Qing Yang, Eicke R. Weber, Henning Feick, 2003 .

Dissociation of VGa–ON complexes in HVPE GaN by high pressure and high temperature annealing

David C. Look, Filip Tuomisto, Ilja Makkonen, 2006 .

Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

Jari Likonen, Izabella Grzegory, Michal Leszczynski, 2001 .

High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Mathias Schubert, Detlef Hommel, Filip Tuomisto, 2004 .

Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

Filip Tuomisto, Tanja Paskova, Michal Bockowski, 2006 .

Dominant intrinsic acceptors in GaN and ZnO

Filip Tuomisto, Kimmo Saarinen, S Hautakangas, 2006 .

High pressure fabrication and processing of GaN:Mg

T. Laine, Izabella Grzegory, Sylwester Porowski, 1999 .