G. Hatakoshi

High‐temperature operation of high‐power InGaAlP visible light laser diodes with an In0.5+δGa0.5−δP active layer

Masaki Okajima, Kazuhiko Itaya, Yukie Nishikawa, 1991 .

Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15 degrees misoriented substrate

Minoru Watanabe, Masaki Okajima, G. Hatakoshi, 1993 .

High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In/sub 0.62/Ga/sub 0.38/P active layer

Masaki Okajima, Kazuhiko Itaya, Yukie Nishikawa, 1991 .

A real-index guided InGaAlP visible laser diode with a small beam astigmatism

Masaki Okajima, Kazuhiko Itaya, Yukio Watanabe, 1990, 12th IEEE International Conference on Semiconductor Laser.

InGaAlP red VCSELs

M. Ishikawa, G. Hatakoshi, K. Takaoka, 2000, LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).

High-brightness InGaAlP green light-emitting diodes

Kazuhiko Itaya, H. Nozaki, G. Hatakoshi, 1992 .

High-efficiency InGaAlP/GaAs visible light-emitting diodes

M. Ishikawa, G. Hatakoshi, M. Ishikawa, 1991 .

Temperature dependence of the threshold current for InGaAlP visible laser diodes

Kazuhiko Itaya, M. Ishikawa, Yutaka Uematsu, 1991 .

Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs

M. Ishikawa, G. Hatakoshi, K. Takaoka, 2000, Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092).