Zacharias Hatzopoulos

发表

Room temperature GaAs exciton-polariton light emitting diode

Pavlos G. Savvidis, George Deligeorgis, N. T. Pelekanos, 2009 .

Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size

Costas Fotakis, C. Kalpouzos, Ilias E. Perakis, 2001 .

Evaluation of performance capabilities of emitters and detectors based on a common MQW structure

Alexandros Georgakilas, D. Cengher, E. Aperathitis, 2001 .

Control of polariton scattering in resonant-tunneling double-quantum-well semiconductor microcavities

Jeremy J. Baumberg, Pavlos G. Savvidis, N. T. Pelekanos, 2010 .

Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices

Alexandros Georgakilas, D. Cengher, Katerina Tsagaraki, 2001 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

Millimeter-wave passive circuit elements based on GaAs micromachining

Mircea Dragoman, George Konstantinidis, D. Vasilache, 2005 .

Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Viorel Dragoi, E. D. Kyriakis-Bitzaros, Alexandros Georgakilas, 2002 .