Hyuck Lim

发表

Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition (<150 °C) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

Jang-Yeon Kwon, Takashi Noguchi, Wan-Shick Hong, 2006 .

High k dielectrics for low temperature electronics

Pedro Barquinha, Elvira Fortunato, Rodrigo Martins, 2008 .

Ultra low sheet resistance on poly silicon film by excimer laser activation

Do-Young Kim, Jang-Yeon Kwon, Takashi Noguchi, 2006 .

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Huaxiang Yin, Chang Jung Kim, Ihun Song, 2008, IEEE Transactions on Electron Devices.

Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application

Jae Cheol Lee, Eunha Lee, Chang Jung Kim, 2006, 2006 International Electron Devices Meeting.

High performance poly-Si thin film transistor (μeff ∼ 258cm2/Vs) fabricated on plastic below 170°C

Do-Young Kim, Jang-Yeon Kwon, Takashi Noguchi, 2005 .

34.2: 2.2 Inch qqVGA AMOLED Drived by Ultra Low Temperature Poly Silicon (ULTPS) TFT Direct Fabricated below 200°C

Jang-Yeon Kwon, Sang Yoon Lee, Jin Jang, 2006 .

Double gate GaInZnO thin film transistors

Huaxiang Yin, Y. S. Park, Donghun Kang, 2008 .

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

Kee-Won Kwon, Changjung Kim, Eunha Lee, 2008, IEEE Electron Device Letters.