Junji Senzaki

发表

Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face

Kenji Fukuda, Makoto Kato, K. Fukuda, 2004 .

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

Kenji Fukuda, Takuma Suzuki, Takashi Shinohe, 2009 .

Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors

Kenji Fukuda, Ryoji Kosugi, Shinsuke Harada, 2002 .

Gate-Area Dependence of SiC Thermal Oxides Reliability

Kenji Fukuda, Hajime Okumura, Mitsuo Okamoto, 2008 .

Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

Keiko Ariyoshi, Shinsuke Harada, Hajime Okumura, 2015 .

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs

Kenji Fukuda, Makoto Kato, K. Fukuda, 2004 .

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Hajime Okumura, Hironori Yoshioka, Yasunori Tanaka, 2014 .

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Kenji Fukuda, Shinsuke Harada, Seiji Suzuki, 2002 .

Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Kenji Fukuda, Ryoji Kosugi, Shinsuke Harada, 2002 .

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Kenji Fukuda, Tomohisa Kato, K. Fukuda, 2006 .

Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Kenji Fukuda, Kazuhiro Adachi, Shinsuke Harada, 2002 .

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Yusuke Kobayashi, Keiko Ariyoshi, Shinsuke Harada, 2016, IEEE Electron Device Letters.

Hot-Implantation of Phosphorus Ions into 4H-SiC

Kenji Fukuda, Seiji Imai, Takashi Shinohe, 2000 .