J. Bai

发表

Characterization of bulk grown GaN and AlN single crystal materials

Balaji Raghothamachar, Michael Dudley, Michael J. Callahan, 2006 .

Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping

M. Carroll, D. Pawlik, M. Barth, 2008, 2008 IEEE International Electron Devices Meeting.

EXPITAXIAL TILTING OF GAN GROWN ON VICINAL SURFACES OF SAPPHIRE

Michael Dudley, Russell D. Dupuis, U. Chowdhury, 2005 .

Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

M. Carroll, Jizhong Li, J. Bai, 2008 .

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

M. Carroll, J. M. Hydrick, J. Li, 2009 .

Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures

Tao Wang, Hao Tang, Tao Wang, 2012 .

Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

J. Benton, Tao Wang, Tao Wang, 2014 .

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

M. Carroll, A. Lochtefeld, J. Bai, 2007 .

Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

M. Carroll, J. M. Hydrick, A. Lochtefeld, 2009 .

Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

M. Carroll, Jizhong Li, K. Fox, 2007 .

Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

M. Carroll, Jizhong Li, J. M. Hydrick, 2009 .

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

Tao Wang, John P. R. David, Jin-Ping Ao, 2005 .

Efficiency enhancement of InGaN/GaN solar cells with nanostructures

Tao Wang, Tao Wang, J. Bai, 2014 .