S. Gupta

High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET

C. Scozzie, V. Veliadis, S. B. Bayne, 2013, IEEE Electron Device Letters.

Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$

C. Scozzie, V. Veliadis, S. B. Bayne, 2013, IEEE Electron Device Letters.

Improved latch-up immunity in junction-isolated smart power ICs with unbiased guard ring

S. Gupta, J.C. Beckman, S.L. Kosier, 2001, IEEE Electron Device Letters.