A. J. Auberton-Herve

发表

High total dose effects on CMOS/SOI technology

Eric Delagnes, B. Giffard, O. Flament, 1991 .

Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides

P. Paillet, Jean-Luc Leray, B. Aspar, 1995 .

CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)

B. Giffard, Michel Bruel, J. Margail, 1990 .

Physical characterization of electron trapping in Unibond(R) oxides

P. Paillet, O. Musseau, C. Marcandella, 1997 .

CMOS-SOI Technologies for High Speed and Radiation Hard Circuits

A. Auberton-Herve, A. J. Auberton-Herve, 1989, ESSDERC '89: 19th European Solid State Device Research Conference.

Characterization by atomic force microscopy of the SOI layer topography in low-dose SIMOX materials

Bernard Aspar, Hubert Moriceau, A. Auberton-Herve, 1997 .

Field dependent charge trapping effects in SIMOX and buried oxides at very high dose

B. Giffard, J. Margail, O. Flament, 1992 .

Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology

Bernard Aspar, Michel Bruel, Christophe Maleville, 1997 .

Silicon-on-insulator by oxygen implantation: an advanced technology

Michel Bruel, J. Margail, J. Stoemenos, 1988 .

From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

A. Umbert, B. Giffard, Michel Bruel, 1988 .

Smart-Cut® Technology: an Industrial Application of Ion Implantation Induced Cavities

Michel Bruel, H. Moriceau, Christophe Maleville, 1998 .