S.L. Rommel

Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping

M. Carroll, D. Pawlik, M. Barth, 2008, 2008 IEEE International Electron Devices Meeting.

Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

P.R. Berger, P. R. Berger, S. Rommel, 2004, IEEE Electron Device Letters.

Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities

P.R. Berger, P. R. Berger, T. Dillon, 1999, IEEE Electron Device Letters.

Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS

Niu Jin, P.R. Berger, R. Vega, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory

R. Yu, P.R. Berger, P. R. Berger, 2006, 2006 64th Device Research Conference.

Si-based interband tunneling devices for high-speed logic and low power memory applications

P.R. Berger, K.D. Hobart, S.L. Rommel, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).