J.G. Fiorenza

Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping

M. Carroll, D. Pawlik, M. Barth, 2008, 2008 IEEE International Electron Devices Meeting.

Fully depleted n-MOSFETs on supercritical thickness strained SOI

I. Lauer, G. Braithwaite, A. Lochtefeld, 2004, IEEE Electron Device Letters.

RF power LDMOSFET on SOI

J.A. del Alamo, D. Antoniadis, J. D. del Alamo, 2001, IEEE Electron Device Letters.

RF power performance of LDMOSFETs on SOI: an experimental comparison with bulk Si LDMOSFETs

J.A. del Alamo, J.G. Fiorenza, 2001, 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173).

Technologies for RF power LDMOSFETs beyond 2 GHz: metal/poly-Si damascene gates and low-loss substrates

J. Scholvin, J.A. del Alamo, J. Scholvin, 2002, Digest. International Electron Devices Meeting,.

Detailed Simulation Study of a Reverse Embedded-SiGe Strained-Silicon MOSFET

A. Lochtefeld, J. Fiorenza, Ji-Soo Park, 2008, IEEE Transactions on Electron Devices.