Takashi Nakazawa

A 9.5-in. 1.3-Mpixel low-temperature poly-Si TFT-LCD fabricated by solid-phase crystallization of very thin films and an ECR-CVD gate insulator

Kenichi Takahara, Hideki Koike, Thomas W. Little, 1993 .

Transistor and physical properties of polycrystalline silicon films prepared by infralow‐pressure chemical vapor deposition

Mitsutoshi Miyasaka, Ichio Yudasaka, Takashi Nakazawa, 1993 .

Low temperature CMOS self-aligned poly-Si TFTs and circuit scheme utilizing new ion doping and masking technique

Tsutomu Hashizume, Minoru Matsuo, Satoshi Inoue, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display

M. Kimura, Satoru Miyashita, Kiyofumi Kitawada, 1999 .