Yutaka Matsuoka

发表

23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process

Eiichi Sano, Shoji Yamahata, M. Yoneyama, 1994 .

IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)

Eiichi Sano, Koichi Murata, Tadao Ishibashi, 1993 .

High-Performance Small-Scale Collector-Up AlGaAs/ GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-lon Implantation (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)

Tadao Ishibashi, Yutaka Matsuoka, Shoji Yamahata, 1994 .

High-efficiency operation of AlGaAs/GaAs power heterojunction bipolar transistors at low collector supply voltage

Masahiro Muraguchi, Tadao Ishibashi, Shoji Yamahata, 1993 .

Application of uni-traveling-carrier waveguide photodiodes in base stations of a millimeter-wave fiber-radio system

Yoshiyuki Doi, Yoshifumi Muramoto, Seiji Fukushima, 1999, International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301).

High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

Hideki Fukano, Yoshifumi Muramoto, Kiyoto Takahata, 1999 .

High-reliability InGaP/GaAs HBTs with 153 GHz f/sub T/ and

Y. Amano, K. Kashiwagi, Yutaka Matsuoka, 2003 .

Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors

Tadao Ishibashi, Kenji Kurishima, Hiroki Nakajima, 1994 .

In situ wafer bonding of an InP/InGaAs epitaxial wafer with a Si wafer in an ultrahigh vacuum chamber

Toshiaki Kagawa, Yutaka Matsuoka, 1996 .

50-Gbit/s operation of monolithic WGPD/HEMT receiver OEIC module

Yutaka Miyamoto, Hideki Fukano, Yoshifumi Muramoto, 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).

High-Bitrate-Measurement-System-Oriented Lower-Jitter 113-Gbit/s 2: 1 Multiplexer and 1: 2 Demultiplexer Modules Using 1-µm InP/InGaAs/InP Double Heterojunction Bipolar Transistors

Yutaka Matsuoka, Yoshiaki Amano, Yukio Ohkubo, 2013, IEICE Trans. Electron..

52 GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105 V/W

Hideki Fukano, Yoshifumi Muramoto, Kiyoto Takahata, 1999 .

Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers

Eiichi Sano, Tadao Ishibashi, Yutaka Matsuoka, 1995 .

High-output-voltage, high speed, high efficiency uni-travelling-carrier waveguide photodiode

Osaake Nakajima, Naofumi Shimizu, K. Kato, 1998 .

Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

Shoji Yamahata, Naoteru Shigekawa, H. Kamitsuna, 2001 .

Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation

Hiroshi Ito, Shoji Yamahata, Kenji Kurishima, 1996 .

Enhancement of f/sub max/ in InP/InGaAs HBTs by selective MOCVD growth of heavily-doped extrinsic base regions

Hiroshi Ito, Shoji Yamahata, Kenji Kurishima, 1996 .

A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process

Eiichi Sano, Mikio Yoneyama, Hiroki Nakajima, 1994 .

Ultra-high f/sub max/ and f/sub T/ InP/InGaAs double-heterojunction bipolar transistors with step-graded InGaAsP collector

Kenji Kurishima, Hiroki Nakajima, S. Yamahata, 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors

Shoji Yamahata, Kenji Kurishima, Hiroki Nakajima, 1995 .

On the Emitter Resistance of High-Performance GaAs- and InP-Based Heterojunction Bipolar Transistors

Yutaka Matsuoka, Y. Ohkubo, A. Takagi, 2008 .

16 dB 80 GHz InGaP/GaAs HBT distributed amplifier

M. Ejima, Y. Amano, Yutaka Arayashiki, 2004 .