Akihiro Yahata

Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy

Koichi Kanzaki, Akihiro Yahata, Wataru Miyao, 1976 .

Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation

Takashi Shinohe, Tomoki Inoue, Akihiro Yahata, 1998 .

Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy

Tomoki Inoue, Akihiro Yahata, Satoshi Urano, 1997 .

4.5 kV Injection Enhanced Gate Transistor: Experimental Verification of the Electrical Characteristics

Hiromichi Ohashi, Tomoki Inoue, Shigeru Hasegawa, 1997 .

Design evaluation of injection enhancement gate transistor based on device simulation

S. Eicher, Akihiro Yahata, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

Transient Voltage-Induced Leakage Current in Power Diode with Semi-Insulating Polycrystalline Silicon Resistive Field Plate

Masaki Atsuta, Akihiro Yahata, 1996 .

4500 V IEGTs having switching characteristics superior to GTO

Akio Nakagawa, Tomoki Inoue, Shigeru Hasegawa, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.