R.P. Smith

An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

Y. Chen, S.C. Martin, R. Smith, 1999, IEEE Electron Device Letters.

Frequency tripler with integrated back-to-back barrier-n-n/sup +/ (bbBNN) varactor diodes in a novel split-waveguide block at 220 GHz

D. Choudhury, A.V. Raisanen, S.C. Martin, 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

Submicron transferred-substrate heterojunction bipolar transistors

D. Mensa, Q. Lee, J. Guthrie, 1999, IEEE Electron Device Letters.

An Internally-matched GaN HEMT Amplifier with 550-watt Peak Power at 3.5 GHz

Y.-F. Wu, J. Milligan, P. Parikh, 2006, 2006 International Electron Devices Meeting.

Wide bandgap semiconductor devices and MMICs for RF power applications

T.J. Smith, J. Palmour, J. Sumakeris, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Study of the effect of the C/sub max//C/sub min/ ratio on the performance of back-to-back Barrier-N-N (bbBNN) varactor frequency multipliers

D. Choudhury, A.V. Raisanen, R.P. Smith, 1994, IEEE Microwave and Guided Wave Letters.

0.1 /spl mu/m Schottky-collector AlAs/GaAs resonant tunneling diodes

M. Reddy, S.C. Martin, J. Liu, 1994, IEEE Electron Device Letters.

High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates

J. Milligan, J. Palmour, S. Allen, 2002, 60th DRC. Conference Digest Device Research Conference.

A 600 GHz planar frequency multiplier feed on a silicon dielectric-filled parabola

S.C. Martin, M. Kim, R.P. Smith, 1997, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997.