Andrew Chizmeshya

发表

Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon

John Tolle, John Kouvetakis, Jose Menendez, 2006 .

Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates

Corey L. Bungay, David J. Smith, John Tolle, 2003 .

SnGe superstructure materials for Si-based infrared optoelectronics

David Smith, John Tolle, Stefan Zollner, 2003 .

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

John Kouvetakis, Jose Menendez, A. Chizmeshya, 2006 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

New classes of Si-based photonic materials and device architectures via designer molecular routes

John Kouvetakis, A. Chizmeshya, J. Kouvetakis, 2007 .

Calibration of a reflectance FTIR method for determination of dissolved CO2 concentration in rhyolitic glasses

Paul F. McMillan, Gordon Moore, P. McMillan, 2000 .

New Ge-Sn materials with adjustable bandgaps and lattice constants

John Tolle, Stefan Zollner, John Kouvetakis, 2002 .

Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices

David J. Smith, Liying Jiang, John Kouvetakis, 2013 .

The equation of state of polyamorphic germania glass: A two‐domain description of the viscoelastic response

A. Chizmeshya, E. Shero, Andrew Chizmeshya, 1995 .

Optical and structural properties of SixSnyGe1−x−y alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2004 .

Ge–Sn semiconductors for band-gap and lattice engineering

Stefan Zollner, John Kouvetakis, Jose Menendez, 2002 .

Practical B and P doping via SixSnyGe1-x-y-zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

John Tolle, John Kouvetakis, Jose Menendez, 2009 .