W. Guo

Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels

J. Van Houdt, W. Vandervorst, K. De Meyer, 2016, 2016 IEEE Symposium on VLSI Technology.

Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

C. Merckling, N. Waldron, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.

Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs

Eddy Simoen, Nadine Collaert, Abdelkarim Mercha, 2008 .

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Bin Tian, Robert Langer, Kathy Barla, 2016 .

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

E. Simoen, Abdelkarim Mercha, R. Carin, 2007 .

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

A. Mercha, B. Kaczer, E. Simoen, 2007, IEEE Electron Device Letters.

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

C. Merckling, D. Lin, N. Waldron, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory

R. Degraeve, J. Van Houdt, G. Van den bosch, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).