A. Du

Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate

A. Chin, D. Kwong, A. Chin, 2005, IEEE Electron Device Letters.

Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

T.P. Chen, A. Du, M. Yang, 2006, IEEE Transactions on Electron Devices.

N-type Schottky barrier source/drain MOSFET using ytterbium silicide

A. Chin, D. Kwong, A. Chin, 2004, IEEE Electron Device Letters.

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

D.S.H. Chan, A. Chin, D. Kwong, 2004, IEEE Electron Device Letters.

Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices

D.S.H. Chan, J.F. Kang, J.D. Chen, 2003, IEEE International Electron Devices Meeting 2003.