Tomislav Šimeček

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Eduard Hulicius, Maya Mikhailova, M. Mikhailova, 2010 .

Origin of recombination transitions at the lattice‐matched GaInAsSb‐GaSb n‐N type‐II heterojunctions

Jiri Oswald, Jiří Pangrác, Eduard Hulicius, 1994 .

Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy

K. D. Moiseev, Maya P. Mikhailova, Evgenii V. Ivanov, 2006 .

Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures

N. D. Stoyanov, K. D. Moiseev, Yu. P. Yakovlev, 1999 .

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Pavel Hubík, Jiří Pangrác, Eduard Hulicius, 2004 .