B. J. Thibeault

III-V MOSFETs: Scaling laws, scaling limits, fabrication processes

P. Asbeck, M. J. W. Rodwell, A. C. Gossard, 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

A. M. Mahajan, B. Thibeault, B. J. Thibeault, 2014 .

Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth

M. J. W. Rodwell, A. C. Gossard, M. Rodwell, 2012, IEEE Electron Device Letters.

Fabrication of Highly Ordered Silicon Nanowire Arrays With Controllable Sidewall Profiles for Achieving Low-Surface Reflection

San-Liang Lee, L. A. Coldren, Yung-Jr Hung, 2011, IEEE Journal of Selected Topics in Quantum Electronics.

Free-space optical link realized with microlensed components

Larry A. Coldren, K. Bertilsson, D. A. Louderback, 1997, 1997 Proceedings 47th Electronic Components and Technology Conference.

Record extrinsic transconductance (2.45 mS/µm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth

M. J. W. Rodwell, A. C. Gossard, B. J. Thibeault, 2013, 2013 Symposium on VLSI Technology.

Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs

M. J. W. Rodwell, A. C. Gossard, M. Rodwell, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.