Kunihiro Suzuki

发表

Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Tetsu Tanaka, Shigeo Satoh, Satoshi Ando, 1993 .

Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction

Kunihiro Suzuki, N. Nakayama, 1992 .

Monte Carlo Simulation of Ion Implantation Profiles Calibrated for Various Ions over Wide Energy Range

Yuji Kataoka, Yoko Tada, Kunihiro Suzuki, 2009 .

Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs

T. Sugii, Y. Tosaka, T. Sugii, 1995, 1995 IEEE International SOI Conference Proceedings.

Analytical models for n/sup +/-p/sup +/ double-gate SOI MOSFET's

T. Sugii, T. Sugii, Kunihiro Suzuki, 1995 .

Measurements and analysis of neutron-reaction-induced charges in a silicon surface region

Toshihiro Sugii, Yoshiharu Tosaka, Shigeo Satoh, 1997 .

Ultrafast low-power operation of p/sup +/-n/sup +/ double-gate SOI MOSFETs

Toshihiro Sugii, Tetsu Tanaka, T. Sugii, 1994, Proceedings of 1994 VLSI Technology Symposium.

Asymmetric peak line shape of infrared dielectric function spectra for thermally grown silicon dioxide films

Kenji Ishikawa, Kunihiro Suzuki, K. Ishikawa, 2000 .

Analytical threshold voltage model for short channel double-gate SOI MOSFETs

T. Sugii, Yoshiharu Tosaka, Y. Tosaka, 1996 .

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Model Based on a Physical High-Field Carrier-Velocity Model

Tatsuya Usuki, Kunihiro Suzuki, 2004 .

Alpha-particle-induced collected charge model in SOI-DRAM's

Yoshiharu Tosaka, Shigeo Satoh, Y. Tosaka, 1999 .

Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

Hiroko Tashiro, Yoko Tada, Takayuki Aoyama, 1998 .

Short-channel single-gate SOI MOSFET model

S. Pidin, Kunihiro Suzuki, S. Pidin, 2003 .

Transient analysis of stored charge in neutral base region

S. Satoh, Kunihiro Suzuki, N. Nakayama, 1992 .

Optimum base doping profile for minimum base transit time

Kunihiro Suzuki, Kunihiro Suzuki, 1991 .

Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride

Hiroko Tashiro, Tatsuya Yamazaki, Takashi Ito, 1995 .

Model for Subthreshold Swing S in Double-Gate SO1 MOSFET's

Toshihiro Sugii, Yoshiharu Tosaka, Kunihiro Suzuki, 1994 .

Analytical model for threshold voltage shift due to impurity penetration through a thin gate oxide

Kunihiro Suzuki, 1997 .

Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs

T. Sugii, Y. Tosaka, T. Sugii, 1996 .

Boron out diffusion from Si substrates in various ambients

Yoko Tada, Kunihiro Suzuki, Hideki Yamawaki, 1997 .

Analytical Models for n ++ -p Double-Gate SO1 MOSFET' s

Toshihiro Sugii, T. Sugii, Kunihiro Suzuki, 1995 .

Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

T. Feudel, Matthias Posselt, Kunihiro Suzuki, 1997 .

Ultrafast Operation of Vth-Adjusted P+ -n+ Double-Gate SOI MOSFET's

Toshihiro Sugii, Tetsu Tanaka, Hiroshi Horie, 1994 .