M. Song

Optimization of LDD devices for cryogenic operation

J. Woo, J. Cable, J.C.S. Woo, 1991, IEEE Electron Device Letters.

Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K

Jason C. S. Woo, J. Woo, M. Song, 1997 .

Physical insight into fractional power dependence of saturation current on gate voltage in advanced short channel MOSFETs (alpha-power law model)

T. Sakurai, T. Hiramoto, Hyunsik Im, 2002, Proceedings of the International Symposium on Low Power Electronics and Design.

Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices

Peng Fang, C. Hu, D. Wollesen, 1997, IEEE Electron Device Letters.