Zuzanna Liliental-Weber

发表

Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

Michael S. Shur, Christian Kisielowski, M. Asif Khan, 1997 .

Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

J. R. Williams, Dmitri N. Zakharov, T. B. Ng, 2004 .

Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

Eicke R. Weber, Petra Specht, P. Specht, 1998 .

Orthodox etching of HVPE-grown GaN

Grzegorz Nowak, Richard J. Molnar, Izabella Grzegory, 2007 .

Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates

Hadis Morkoç, Xianfeng Ni, Zuzanna Liliental-Weber, 2006 .

Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding

Jacek B. Jasinski, Evelyn L. Hu, Zuzanna Liliental-Weber, 2002 .

The role of As in molecular-beam epitaxy GaAs layers grown at low temperature

Chris Kocot, Raymond P. Mariella, C. Kocot, 1991 .

Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Jacek B. Jasinski, Michael A. Scarpulla, W. Walukiewicz, 2003 .

Structure and electronic properties of InN and In-rich group III-nitride alloys

Wladek Walukiewicz, Joel W. Ager, J. Y. Wu, 2006 .

Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy

Robert F. Davis, Edward A. Preble, D. N. Zakharov, 2005 .

Photoluminescence from structural defects in GaN

Jacek B. Jasinski, Hadis Morkoç, M. A. Reshchikov, 2003 .

Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs

Eicke R. Weber, Paul B. Klein, Petra Specht, 1999 .

Effect of matrix on InAs self-organized quantum dots on InP substrate

A. R. Kovsh, Eicke R. Weber, A. E. Zhukov, 1998 .

Microstructure of GaAs/GaN interfaces produced by direct wafer fusion

Jacek B. Jasinski, Evelyn L. Hu, E. Hu, 2002 .

Microstructure of Ti/Al ohmic contacts for n-AlGaN

Paul K. Chu, Jack Washburn, P. Chu, 1998 .

The role of the multi buffer layer technique on the structural quality of GaN

Motoaki Iwaya, Isamu Akasaki, J. H. Mazur, 2000 .

Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire

Eicke R. Weber, Isamu Akasaki, Joel W. Ager, 1996 .

LOW THRESHOLD QUANTUM DOT INJECTION LASER EMITTING AT 1.9MU M

D. Bimberg, Sergei V. Zaitsev, N. N. Ledentsov, 1998 .

Rapid thermal annealing of low-temperature GaAs layers

William J. Schaff, Jack Washburn, W. Schaff, 1995 .

Structure and carrier lifetime in LT-GaAs

S. Gupta, Zuzanna Liliental-Weber, J. Whitaker, 1993 .

Low‐temperature grown compositionally graded InGaN films

Wladek Walukiewicz, Eugene E. Haller, Joel W. Ager, 2008 .

Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs

Eicke R. Weber, A. Stoschek, Weimin M. Chen, 1994 .

Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure

Shuji Nakamura, Christian Kisielowski, S. Nakamura, 1997 .

Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Milton Feng, Russell D. Dupuis, JianJang Huang, 2001 .

The advanced unified defect model for Schottky barrier formation

Eicke R. Weber, I. Lindau, Nathan Newman, 1988 .

Stoichiometry‐related defects in GaAs grown by molecular‐beam epitaxy at low temperatures

Eicke R. Weber, Z. U. Rek, M. Kamińska, 1989 .

Native point defects in low‐temperature‐grown GaAs

Eicke R. Weber, W. Walukiewicz, Z. Liliental-Weber, 1995 .

Stable, freestanding Ge nanocrystals

Eugene E. Haller, Ian D. Sharp, Joel W. Ager, 2005 .

Microstructure of laterally overgrown GaN layers

David Cherns, Z. Liliental-Weber, D. Cherns, 2001 .

The advanced unified defect model and its applications

Eicke R. Weber, I. Lindau, Nathan Newman, 1988 .

Ta-based interface ohmic contacts to AlGaN/GaN heterostructures

Peter M. Asbeck, Tony E. Haynes, T. E. Haynes, 2001 .

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2

Eugene E. Haller, Ian D. Sharp, Joel W. Ager, 2005 .

Electron beam and optical depth profiling of quasibulk GaN

Jacek B. Jasinski, David C. Look, Andrei Osinsky, 2000 .

Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment

Jacek B. Jasinski, Jacek M. Baranowski, K. Pakuła, 2004 .

Defect reduction in (112¯0) a-plane GaN by two- stage epitaxial lateral overgrowth

Necmi Biyikli, Hadis Morkoç, Xianfeng Ni, 2006 .

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

Patrick Fay, Jacek B. Jasinski, Russell D. Dupuis, 2004 .