H. He

Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

T. Nagumo, N. Loubet, W. Schwarzenbach, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Bottom oxidation through STI (BOTS) — A novel approach to fabricate dielectric isolated FinFETs on bulk substrates

P. Oldiges, B. Haran, H. Bu, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

M. Vinet, L. Grenouillet, T. Nagumo, 2012, 2012 International Electron Devices Meeting.

FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

O. Faynot, Y. Escarabajal, B. Lherron, 2014, 2014 IEEE International Electron Devices Meeting.