Deok-Yong Cho

发表

Interfacial Metal-Oxide Interactions in Resistive Switching Memories.

Ilia Valov, Michael Luebben, Kug-Seung Lee, 2017, ACS applied materials & interfaces.

The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO x N y Gate Dielectrics

Jeong Hwan Kim, Sang Young Lee, Cheol Seong Hwang, 2010 .

Electrochemical Tantalum Oxide for Resistive Switching Memories

Rainer Waser, Ilia Valov, Kug-Seung Lee, 2017, Advanced materials.

Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells.

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2013, Nanoscale.

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Cheol Seong Hwang, Jun Yeong Seok, Gun Hwan Kim, 2010, Nanotechnology.

Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2012, Advanced materials.

Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.

Rainer Waser, Ilia Valov, Jan van den Hurk, 2014, Physical chemistry chemical physics : PCCP.

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2013, Scientific Reports.

Direct Observation of Hole Current in Amorphous Oxide Semiconductors under Illumination

Jeong Hwan Kim, Cheol Seong Hwang, Jae Kyeong Jeong, 2011 .

Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Seung Wook Ryu, Cheol Seong Hwang, Byung Joon Choi, 2009 .