S. Saini

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

Asen Asenov, R. Balasubramaniam, S. Saini, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation study

Asen Asenov, Savas Kaya, J. H. Davies, 2000 .

Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETs with Thin Gate Oxides

A. Asenov, S. Saini, A. Asenov, 1999, 29th European Solid-State Device Research Conference.