R. Jakomin

p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor

Isabelle Sagnes, Grégoire Beaudoin, Ludovic Largeau, 2011 .

High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2011 .

Control of tensile strain in germanium waveguides through silicon nitride layers

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2012 .

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Fernando Ponce, Hongen Xie, Mauricio P. Pires, 2018 .

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

Isabelle Sagnes, Grégoire Beaudoin, Philippe Boucaud, 2013 .