P.M. Chavarkar

Bias-dependent performance of high-power AlGaN/GaN HEMTs

Y.-F. Wu, P. Parikh, M. Moore, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

High-gain microwave GaN HEMTs with source-terminated field-plates

Y.-F. Wu, P. Parikh, M. Moore, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology

U. Mishra, P. Parikh, P. Chavarkar, 1997, IEEE Electron Device Letters.

3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz

Y.-F. Wu, P. Parikh, A. Saxler, 2003, IEEE International Electron Devices Meeting 2003.