O. Katz

发表

Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility

Joseph Salzman, Gad Bahir, G. Bahir, 2003 .

Low-frequency 1/f noise and persistent transients in AlGaN-GaN HFETs

G. Bahir, O. Katz, J. Salzman, 2005, IEEE Electron Device Letters.

Charge carrier mobility in field effect transistors: analysis of capacitance–conductance measurements

N. Tessler, G. Bahir, O. Katz, 2004 .

GaN layer growth optimization for high power devices

O. Katz, J. Salzman, B. Meyler, 2001 .

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

T. Rotter, O. Katz, A. Horn, 2003 .

Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures

E. Finkman, Joseph Salzman, U. Tisch, 2001 .

Gain mechanism in GaN Schottky ultraviolet detectors

V. Garber, G. Bahir, O. Katz, 2001 .

Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry

V. Garber, G. Bahir, O. Katz, 2002 .

InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

G. Bahir, O. Katz, J. Salzman, 2004 .

Determination of Band‐Gap Bowing for AlxGa1–xN Alloys

U. Tisch, O. Katz, J. Salzman, 2001 .

Vertical versus Lateral GaN Schottky Ultraviolet Detectors and Their Gain Mechanism

V. Garber, G. Bahir, O. Katz, 2001 .

Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

G. Bahir, O. Katz, J. Salzman, 2004 .

Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor

G. Bahir, O. Katz, J. Salzman, 2005, IEEE Transactions on Electron Devices.