J.Y.C. Sun

Using erase self-detrapped effect to eliminate the flash cell program/erase cycling V/sub th/ window close

J. R. Shih, S. H. Chen, H. D. Su, 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

Mis-match characterization of 1.8 V and 3.3 V devices in 0.18 /spl mu/m mixed signal CMOS technology

Shyh-Chyi Wong, J. Sun, Shyh-Chyi Wong, 2001, ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).

An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications

M.T. Yang, D.C.W. Kuo, A.K.L. Chang, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

A 3.5ns CMOS 64K ECL RAM at 77/spl deg/K

R. L. Franch, S. E. Schuster, P. J. Restle, 1988, Symposium 1988 on VLSI Circuits.

A high performance BiCMOS technology using 0.25 mu m CMOS and double poly 47 GHz bipolar

Y. Taur, P. Coane, D.D. Tang, 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

Ultra-low leakage 0.16 /spl mu/m CMOS for low-standby power applications

S.Z. Chang, B.L. Lin, J.J. Liaw, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

A low-power static frequency divider circuit in bipolar technology

J.Y.C. Sun, J. D. Warnock, K. Y. Toh, 1992, Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.

High-performance bipolar technology for improved ECL power delay

D.D. Tang, C. Stanis, J. Warnock, 1991, IEEE Electron Device Letters.

IIIB-1 degradation of 77-K MOSFET characteristics due to channel hot electrons

J.Y.C. Sun, M.R. Wordeman, 1984, IEEE Transactions on Electron Devices.