Michael G. Case

A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process

Bernard S. Meyerson, Lawrence E. Larson, David L. Harame, 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

A high gain, low power MMIC LNA for Ka-band using InP HEMTs

Mehran Matloubian, P. Janke, Carl W. Pobanz, 1999, 1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).

12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology

Bernard S. Meyerson, David L. Harame, Michael G. Case, 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz

Adele E. Schmitz, L. D. Nguyen, J. B. Shealy, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

Lawrence E. Larson, David L. Harame, J. Malinowski, 2001 .