Stephen K. O’Leary

Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis

Michael S. Shur, Lester F. Eastman, M. Shur, 2005 .

Potential performance of indium-nitride-based devices

Michael S. Shur, Lester F. Eastman, M. Shur, 2006 .

A simplified joint density of states analysis of hydrogenated amorphous silicon

S. O’Leary, Stephen K. O’Leary, Saad M. Malik, 2002 .

Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis

Michael S. Shur, Lester F. Eastman, M. Shur, 2003 .

Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

Joanne C. Zwinkels, David J. Lockwood, Li-Lin Tay, 2006 .

Transient electron transport in wurtzite GaN, InN, and AlN

Michael S. Shur, Lester F. Eastman, M. Shur, 1999 .