D. Xu

Impact of subchannel design on DC and RF performance of 0.1 μm MODFETs with InAs-inserted channel

Tetsuya Suemitsu, Yohtaro Umeda, Y. Yamane, 1998 .

MBE growth of double-sided doped HEMTs with an InAs layer inserted in the channel

G. Tränkle, M. Sexl, G. Tränkle, 1997 .

Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design

W. Klein, M. Chertouk, G. Trankle, 1996, IEEE Electron Device Letters.

Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology

Tetsuya Suemitsu, Yohtaro Umeda, Toshiaki Tamamura, 2000 .

Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and 350-GHzfmax with 160-GHzfT

G. Tränkle, W. Klein, M. Chertouk, 1996 .

Reliable high power GaInAsP/InP (1.9 [micro sign]m) laser diodes

A. Ovtchinnikov, R. Supe, D. Xu, 1999 .

Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and f/sub max/ of 350 GHz

W. Klein, M. Chertouk, G. Trankle, 1995, Seventh International Conference on Indium Phosphide and Related Materials.