J.J. Liou

Gate oxide evaluation under very fast transmission line pulse (VFTLP) CDM-type stress

S. Malobabic, Yuanzhong Zhou, D.F. Ellis, 2008, 2008 7th International Caribbean Conference on Devices, Circuits and Systems.

Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications

Lining Zhang, J.J. Liou, J.E. Vinson, 2010, IEEE Transactions on Electron Devices.

Eliminating parasitic resistances in parameter extraction of semiconductor device models

F.J. Garcia Sanchez, A. Ortiz-Conde, J.J. Liou, 1995, Proceedings of First International Caracas Conference on Devices, Circuits and Systems.

Investigation of turn-on speeds of electrostatic discharge protection devices using transmission-line pulsing technique

D.H. Huang, X.Y. Du, J.J. Liou, 2008, 2008 2nd IEEE International Nanoelectronics Conference.

Forward-voltage capacitance and thickness of p-n junction space-charge regions

J.S. Park, J. Liou, F. Lindholm, 1987, IEEE Transactions on Electron Devices.

Study of Electrothermal Stress Effect on RF Performance of InGaP/GaAs Heterojunction Bipolar Transistor-Based Low-Noise Amplifier

Jiann-Shiun Yuan, Xiang Liu, J. Liou, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

Extraction of the threshold voltage of MOSFETs: an overview

J.J. Liou, A. Ortiz-Condez, F.G. Sanchez, 1997, 1997 IEEE Hong Kong Proceedings Electron Devices Meeting.

Robustness evaluation of ESD protection devices in NEMS using a novel TCAD methodology

Yan Han, Shurong Dong, Qiang Cui, 2008, 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems.

Comments on 'Early voltage in very-narrow-base bipolar transistors' by D.J. Roulston

J. Liou, J.J. Liou, 1990, IEEE Electron Device Letters.