M. Aslam

DEFECT STRUCTURE AND GENERATION OF INTERFACE STATES IN MOS STRUCTURES

P. Balk, L. Do Thanh, M. Aslam, 1986 .

Common origin for electron and hole traps in MOS devices

M. Aslam, M. Aslam, 1987, IEEE Transactions on Electron Devices.

High temperature annealing behavior of electron traps in thermal SiO2

D. R. Young, P. Balk, P. Balk, 1984 .