Bernhard Holländer

发表

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Jörg Schulze, Stephan Wirths, Dan Buca, 2013 .

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Gregor Mussler, Jean-Michel Hartmann, Stephan Wirths, 2015 .

Tensely strained GeSn alloys as optical gain media

Gregor Mussler, Stephan Wirths, Zoran Ikonic, 2013 .

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Jean-Michel Hartmann, Dan Buca, S. Mantl, 2010 .

Si/SiGe electron resonant tunneling diodes with graded spacer wells

Gabriel M. Crean, Douglas J. Paul, Karl-Fredrik Berggren, 2001 .

Tensely strained silicon on SiGe produced by strain transfer

Reinhard Carius, Matty Caymax, Dan Buca, 2004 .

High Performance Si/Si Ge Resonant Tunneling Diodes

Douglas J. Paul, S. Mantl, Igor Zozoulenko, 2001 .

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

Paul Harrison, Gregor Mussler, Stephan Wirths, 2014 .

n-type Si/SiGe resonant tunnelling diodes

Gabriel M. Crean, Douglas J. Paul, Siegfried Mantl, 2002 .

Reduced Pressure CVD Growth of Ge and Ge1−xSnx Alloys

Gregor Mussler, Stephan Wirths, Detlev Grützmacher, 2013 .

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

Michael Heuken, Holger Kalisch, Andrei Vescan, 2014 .

Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

Gabriel M. Crean, Douglas J. Paul, J.-L. Lazzari, 1998 .

Si/SiGe electron resonant tunneling diodes

Douglas J. Paul, Karl-Fredrik Berggren, S. Mantl, 2000 .