Benedetto Buono

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

Carl-Mikael Zetterling, Arash Salemi, Mikael Östling, 2013 .

Current Gain Degradation in 4H-SiC Power BJTs

Carl-Mikael Zetterling, Mikael Östling, Reza Ghandi, 2011 .

High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

Carl-Mikael Zetterling, Mikael Östling, Reza Ghandi, 2011 .

Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability

Martin Domeij, Kwangwon Lee, M. Domeij, 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Carl-Mikael Zetterling, Mikael Östling, Hyung-Seok Lee, 2009 .

Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs

Carl-Mikael Zetterling, Bengt Gunnar Malm, Reza Ghandi, 2010, IEEE Transactions on Electron Devices.

Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Carl-Mikael Zetterling, Arash Salemi, Hossein Elahipanah, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).