Yuh-Renn Wu

发表

On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays

Jian Jang Huang, Liang-Yi Chen, Jian-jang Huang, 2013, IEEE Journal of Quantum Electronics.

Localization landscape theory of disorder in semiconductors. I. Theory and modeling

Claude Weisbuch, Marco Piccardo, Marcel Filoche, 2017, 1704.05512.

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

James S. Speck, Robert M. Farrell, Claude Weisbuch, 2017 .

Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Chun-Hsiang Chang, Ying-Yuan Huang, JianJang Huang, 2011, IEEE Electron Device Letters.

Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics

Bo-Yu Huang, Peichen Yu, Feng-Yu Chang, 2014 .

Projected Efficiency of Polarization-Matched p-In $_{\bm x}$ Ga $_{\bm {1-x}}$ N/i-In $_{\bm y}$ Ga $_{\bm{1-y}}$ N/n-GaN Double Heterojunction Solar Cells

Hao-Chung Kuo, Peichen Yu, Edward Yi Chang, 2013 .

Projected Efficiency of Polarization-Matched

Hao-Chung Kuo, Peichen Yu, Shiuan Huei Lin, 2013 .

Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures

Jasprit Singh, Yuh-Renn Wu, Madhusudan Singh, 2003 .

Optimization of the gain curve of the InGaN blue light laser diode

Te-Jen Kung, Yen-Chang Chen, Yuh-Renn Wu, 2016, 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

Percolation transport study in nitride based LED by considering the random alloy fluctuation

Chi-kang Li, Chi-Kang Li, Yuh-Renn Wu, 2015 .

Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting

Jasprit Singh, Jasprit Singh, Yih-Yin Lin, 2009 .

Studying the short channel effect in the scaling of the AlGaN/GaN nanowire transistors

Chin-Yi Chen, Yuh-Renn Wu, Chin-Yi Chen, 2013 .

Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors

Jian-jang Huang, Yuh-Renn Wu, Liang-Yu Su, 2015, IEEE Electron Device Letters.

Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process

I-Chun Cheng, Kuo-Chuang Chiu, C. Huang, 2010 .

Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs

Hao-Chung Kuo, Peichen Yu, Cheng-Yu Chang, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Hao-Chung Kuo, Peichen Yu, Tien-Chang Lu, 2008 .

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

James S. Speck, J. Speck, Yuh-Renn Wu, 2012 .

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

James S. Speck, J. Speck, N. Young, 2012 .

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

James S. Speck, Tsung-Jui Yang, J. Speck, 2014 .

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

James S. Speck, Shuji Nakamura, Alexey E. Romanov, 2012 .

InGaN light emitters: A comparison of quantum dot and quantum well based devices

Yuh-Renn Wu, Yih-Yin Lin, J. Jasprit Singh, 2008, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.

Strain-enhanced photoluminescence from Ge direct transition

T.-H. Cheng, Chih-Wen Liu, C.-Y. Ko, 2010 .

Nonpolar and semipolar LEDs

James S. Speck, J. Speck, C. Huang, 2014 .