Richard T. Beeler

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

John Tolle, John Kouvetakis, Chi Xu, 2010 .

Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices

David J. Smith, Liying Jiang, John Kouvetakis, 2013 .

Near IR Photodiodes with Tunable Absorption Edge Based on Ge1-y Sny Alloys Integrated on Silicon

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

David Smith, Liying Jiang, John Kouvetakis, 2012 .

Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Thomas R. Harris, John Kouvetakis, R. Beeler, 2013 .