Y.-M. Niquet

SOI technology for quantum information processing

M. Vinet, S. Barraud, R. Maurand, 2019, 2016 IEEE International Electron Devices Meeting (IEDM).

Uniaxially stressed germanium with fundamental direct band gap

V. Reboud, J. Widiez, F. Rieutord, 2015, 1603.03454.

Study of the light emission in Ge layers and strained membranes on Si substrates

V. Reboud, Alexei Chelnokov, A. Gassenq, 2016 .

Electric-field tuning of the valley splitting in silicon corner dots

S. Barraud, M. F. Gonzalez-Zalba, L. Bourdet, 2018, Applied Physics Letters.

DBR based cavities in strained Ge microbridge on 200 mm Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible laser applications

V. Reboud, J. Widiez, Jérôme Faist, 2015, CLEO 2015.

Topological states in multi-orbital HgTe honeycomb lattices

Y. Niquet, C. Delerue, W. Beugeling, 2015, Nature Communications.

Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

E. Lind, L.-E. Wernersson, E. Lind, 2009, IEEE Transactions on Electron Devices.

Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Christophe Delerue, Clement Tavernier, Denis Rideau, 2017 .