Alireza Alian

发表

Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

Nadine Collaert, Tsvetan Ivanov, Dennis Lin, 2018, 2018 IEEE Symposium on VLSI Technology.

Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET

Rita Rooyackers, Anne Vandooren, Aaron Thean, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces

Marc Heyns, Kristin De Meyer, Marc Meuris, 2011 .

Electrical Properties of III-V/Oxide Interfaces

Marc Heyns, Marc Meuris, Guy Brammertz, 2009 .

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures☆

Geert Hellings, Jerome Mitard, Niamh Waldron, 2012 .

The impact of interface and border traps on current–voltage, capacitance–voltage, and split-CV mobility measurements in InGaAs MOSFETs

Aaron Thean, Nadine Collaert, Giovanni Verzellesi, 2017 .

Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices

Aaron Thean, Nadine Collaert, Tsvetan Ivanov, 2013, 2013 IEEE International Electron Devices Meeting.

Oxide Trapping in the InGaAs–$\hbox{Al}_{2} \hbox{O}_{3}$ System and the Role of Sulfur in Reducing the $ \hbox{Al}_{2}\hbox{O}_{3}$ Trap Density

R. Degraeve, C. Merckling, Dennis Lin, 2012, IEEE Electron Device Letters.

Impact of Pre- and Post-Growth Treatment on the Low-Frequency Noise of InGaAs nMOSFETs

Cor Claeys, Eddy Simoen, Aaron Thean, 2014 .

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

Guy Brammertz, Matty Caymax, Clement Merckling, 2011 .