K. Rajagopalan

Letter to the Editor In0.75 Ga0.25As channel layers with record mobility exceeding 12,000 cm 2 /Vs for use in high-j dielectric NMOSFETs

Ravi Droopad, Matthias Passlack, Michael Canonico, 2006 .

Compound semiconductor MOSFETs

Ravi Droopad, J. Abrokwah, Matthias Passlack, 2007 .

Implant-free high-mobility flatband MOSFET: principles of operation

M. Passlack, J. Abrokwah, K. Rajagopalan, 2006, IEEE Transactions on Electron Devices.

1-$\mu\hbox{m}$ Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

P. Fejes, M. Passlack, J. Abrokwah, 2007, IEEE Electron Device Letters.

In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-κ dielectric NMOSFETs

Ravi Droopad, J. Abrokwah, Matthias Passlack, 2006 .

High mobility NMOSFET structure with high-/spl kappa/ dielectric

D. Nguyen, M. Passlack, J. Abrokwah, 2005, IEEE Electron Device Letters.

Development of GaAs-based MOSFET using molecular beam epitaxy

Ravi Droopad, Peter Fejes, Matthias Passlack, 2007 .

High Mobility III-V MOSFETs For RF and Digital Applications

A. Asenov, P. Fejes, X. Li, 2007, 2007 IEEE International Electron Devices Meeting.