S. Misawa

Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy

S. Misawa, S. Yoshida, S. Misawa, 1982 .

Experimental 3C-SiC MOSFET

Y. Hayashi, T. Takahashi, Y. Hayashi, 1986, IEEE Electron Device Letters.

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

Sadafumi Yoshida, H. Okumura, S. Misawa, 1991 .

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

Sadafumi Yoshida, S. Misawa, S. Yoshida, 1983 .