Takeshi Yamaguchi

Band diagram and carrier conduction mechanism in ZrO/sub 2//Zr-silicate/Si MIS structure fabricated by pulsed-laser-ablation deposition

Akira Toriumi, Noburu Fukushima, Hideki Satake, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Novel dielectric breakdown model of Hf-silicate with high temperature annealing

Noburu Fukushima, Hideki Satake, Takeshi Yamaguchi, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

LaAlO3 gate dielectric with ultrathin equivalent oxide thickness and ultralow leakage current directly deposited on Si substrate

Masamichi Suzuki, Masato Koyama, Noburu Fukushima, 2008 .

Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Yoshitaka Tsunashima, Kazuhiro Eguchi, Katsuyuki Sekine, 2005 .

Equivalent Circuit Model for Thresholdless Antiferroelectric Liquid Crystal Displays

Haruhiko Okumura, Goh Itoh, Hisao Fujiwara, 1999 .