Ranbir Singh

发表

Cryogenic operation of power bipolar transistors

Bantval J. Baliga, Ranbir Singh, 1996 .

Compact models for silicon carbide power devices

Allen R. Hefner, Alan Mantooth, Ty McNutt, 2004 .

Fulfilling the Promise of High-Temperature Operation

Ranbir Singh, Siddarth Sundaresan, 2015 .

7.4 kV, 330 A (pulsed), single chip, high temperature 4H-SiC pin rectifier

John W. Palmour, D. C. Capell, Ranbir Singh, 2002 .

Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

Homer Alan Mantooth, Ty McNutt, David W. Berning, 2004 .

Cree Application Note: SiC Power Schottky Diodes in Power Factor Correction Circuits

Ranbir Singh, James Richmond, 2003 .

Large area, ultra-high voltage 4H-SiC p-i-n rectifiers

Allen R. Hefner, John W. Palmour, David W. Berning, 2002 .

Parameter extraction sequence for silicon carbide schottky, merged PiN Schottky, and PiN power diode models

Homer Alan Mantooth, Allen R. Hefner, Ty McNutt, 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

Physics-based modeling and characterization for silicon carbide power diodes

H. Alan Mantooth, Allen R. Hefner, Ty McNutt, 2006 .

SiC device technology: remaining issues

John W. Palmour, A. V. Suvorov, Calvin H. Carter, 1997 .

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

Stoyan Jeliazkov, Brian Grummel, Ranbir Singh, 2014 .

High channel density, 20 A 4H-SiC ACCUFET with R/sub onsp/=15 m/spl Omega/-cm/sup 2/

John W. Palmour, Jim Richmond, D. C. Capell, 2003 .

Carrier lifetime measurements in 10 kV 4H-SiC diodes

Pavel Ivanov, Michael E. Levinshtein, John W. Palmour, 2003 .

CPWR-AN 02 Rev-600 V , 1-40 A , Schottky Diodes in SiC and Their Applications

Sei-Hyung Ryu, John Palmour, Anant Agarwal, 2003 .

High temperature SiC trench gate p-IGBTs

Sei-Hyung Ryu, John W. Palmour, S. Ryu, 2003 .

Short circuit robustness of 1200 V SiC switches

Brian Grummel, B. Grummel, S. Sundaresan, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

The charged particle response of silicon carbide semiconductor radiation detectors

John W. Palmour, Frank H. Ruddy, John G. Seidel, 2003 .

Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion | NIST

Jih-Sheng Lai, Allen R. Hefner, Ranbir Singh, 2004 .

Analysis and optimization of power MOSFETs for cryogenic operation

Bantval J. Baliga, Ranbir Singh, R. Singh, 1993 .

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

Yoshitaka Sugawara, Katsunori Asano, John W. Palmour, 2000 .

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

S. Sundaresan, Ranbir Singh, Siddarth Sundaresan, 2015, IEEE Power Electronics Magazine.

Improvement of the Current Gain Stability of SiC Junction Transistors

Brian Grummel, Dean P. Hamilton, Ranbir Singh, 2015 .

Design of dual use, high efficiency, 4H-SiC Schottky and MPS diodes

J. W. Palmour, A. Agarwal, J. Palmour, 2000, Collection of Technical Papers. 35th Intersociety Energy Conversion Engineering Conference and Exhibit (IECEC) (Cat. No.00CH37022).

1500 V, 4 amp 4H-SiC JBS diodes

Jih-Sheng Lai, Allen R. Hefner, John W. Palmour, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Cryogenic operation of asymmetric N-channel IGBTs

Bantval J. Baliga, B. J. Baliga, Ranbir Singh, 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

High voltage SiC diodes with small recovery time

Pavel Ivanov, Michael E. Levinshtein, S. N. Yurkov, 2000 .